general photomultiplier tube R7517 figure 1: typical spectral response tpmsb0174ea 0.01 0.1 100 1000 100 200 300 400 500 600 700 800 wavelength (nm) cathode radiant sensitivity (ma/w) quantum efficiency (%) 10 1 cathode radiant sensitivity quantum efficiency information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?006 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. specifications features wide spectral response ......................... high cathode sensitivity luminous ................................................. radiant at 420 nm ................................... quantum efficiency at 220 nm ........................ high anode sensitivity (at 1000 v) luminous ................................................. radiant at 420 nm ............................ applications fluorescence spectrophotometers fluorescence immuno assay so 2 monitor (uv fluorescence) 185 nm to 760 nm 160 a/lm typ. 105 ma/w typ. 40 % typ. 1600 a/lm typ. 10.5 10 5 a/w typ. high qe, bialkali photocathode 28 mm (1-1/8 inch) diameter, 9-stage, side-on type parameter description/value unit spectral response wavelength of maximum response photocathode window material dynode direct interelectrode capacitances base weight operating ambient temperature storage temperature suitabie socket suitabie socket assembly 185 to 760 420 bialkali 8 24 uv glass bialkali circular-cage 9 4 6 11-pin base jedec no. b11-88 approx. 45 -30 to +50 -30 to +50 e678?1a (sold separately) e717?3 (sold separately) e717?4 (sold separately) nm nm mm pf pf g c c materiai minimum effective area secondary emitting surface structure number of stages anode to last dynode anode to all other electrodes
maximum ratings (absolute maximum values) characteristlcs (at 25 c) photomultiplier tubes R7517 notes a: b: c: d: e: averaged over any interval of 30 seconds maximum. the light source is a tungsten filament lamp operated at a distribution temperature of 2856k. supply voltage is 100 v between the cathode and all other electrodes connected together as anode. red/white ratio is the quotient of the cathode current measured using a red filter (toshiba r-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as note b. the value is cathode output current when a blue filter (corning cs 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as note b. measured with the same light source as note b and with the voltage distribution ratio shown in table 1 below. h: i: j: k: (1) light hysteresis the tube is operated at 750 v with an anode current of 1 a for 5 minutes. the light is then removed from the tube for a minute. the tube is then re-illuminated by the previous light level for a minute to measure the variation. (2) voltage hysteresis the tube is operated at 300 v with an anode current of 0.1 a for 5 minutes. the light is then removed from the tube and the supply voltage is quickly increased to 800 v. after a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. the rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. the electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. in measurement, the whole photocathode is illuminated. also called transit time jitter. this is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the fwhm of the frequency distribution of electron transit times. hysteresis is temporary instability in anode current after light and voltage are applied. where q = electronic charge (1.60 10 -19 coulomb). ldb = anode dark current (after 30 minute storage) in amperes. g = gain. ? f = bandwidth of the system in hertz. 1 hertz is used. s = anode radiant sensitivity in amperes per watt at the wave- length of peak response. f: g: measured with the same supply voltage and voltage distribution ratio as note e after removal of light. eni is an indication of the photon-limited signal-to-noise ratio. it refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. eni = s 2q . ldb . g . ? f electrode k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p distribution ratio 1111111111 suppiy voltage: 1000 v, k: cathode, dy: dynode, p: anode table 1: voltage distribution ratio hysteresis = 100 (%) l max. l i l min. tpmsb0002ea time max. l min. l i l anode current 0 5 6 7 (minutes) value 1250 250 0.1 v v ma unit parameter supply voltage average anode current a typ. unit 50 % a/lm ma/w ma/w a/lm a/w a/w na w ns ns ns % % 40 (at 220 nm) 160 71 105 0.01 13 1600 7.1 10 5 10.5 10 5 1.0 10 7 5 1.2 10 -16 2.2 22 1.2 0.1 1.0 max. min. quantum efficiency (at peak wavelength) luminous b radiant red/white ratio c blue sensitivity index d luminous e radiant anode pulse rise time h electron transit time i transit time spread (tts) j light hysteresis voltage hysteresis at 210 nm at 420 nm at 210 nm at 420 nm 150 12 1200 parameter cathode sensitivity anode sensitivity gain e anode dark current f (after 30 min storage in darkness) eni (equivalent noise input) g time response e anode current stability k between anode and cathode between anode and last dynode
figure 2: anode luminous sensitivity and gain characteristics figure 3: typical time response figure 4: typical eni with wavelength tpmsb0175eb tpmsb0004ec tpmsb0176ea 500 700 1000 1500 supply voltage (v) time (ns) 1 2 4 6 8 10 20 40 60 80 100 rise time transit time 100 200 300 400 500 600 700 800 wavelength (nm) 10 -16 10 -15 10 -14 10 -13 10 -12 equivalent noise input (w) 500 700 1000 1500 supply voltage (v) 10 0 10 1 10 2 10 3 10 4 10 5 anode luminous sensitivity (a/lm) gain 10 3 10 4 10 5 10 6 10 7 10 8 typical anode sensitivity minimum anode sensitivity typical gain
tpms1059e02 jul. 2006. ip figure 5: dimensional outline and basing diagram (unit: mm) warning?ersonal safety hazards electrical shock operating voltages applied to this device present a shock hazard. photomultiplier tubes R7517 tpmsa0005eb 1 2 4 3 5 7 6 8 9 10 k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p direction of light 11 bottom view (basing diagram) 28.5 1.5 8 min. t9 bulb photocathode 24 min. 49.0 0.25 80 max. 94 max. 32.2 0.5 11 pin base jedec no.b11-88 figure 7: d type socket assembly (unit: mm) figure 6: socket (unit: mm) sold separately sold separately tacca0002eh tacca0277ea tacca0064ea 33 5 49 3.5 38 29 4 18 * hamamatsu also provides c4900 series compact high voltage power supplies and c6270 series dp type socket assemblies which incor- porate a dc to dc converter type high voltage power supply. potting compound r1 to r10 c1 to c3 : 330 k ? : 10 nf 3.5 33.0 0.3 49.0 0.3 29.0 0.3 38.0 0.3 4 0.7 30.0 450 10 5 31.0 0.5 housing (insulator) r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal gnd signal output rg-174/u(black) -hv awg22 (violet) p k 10 power supply gnd awg22 (black) socket pin no. pmt 9 8 7 6 5 4 3 2 1 11 +0 -1 e717-63 e717-74 e678-11a r1 to r10 c1 to c3 : 330 k ? : 10 nf r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal output (a) -hv (k) p k 10 gnd (g) socket pin no. 9 8 7 6 5 4 3 2 1 11 * "wiring diagram applies when -hv is supplied." to supply +hv,connect the pin "g" to+hv, and the pin "k" to the gnd. pmt 26.0 0.2 22.4 0.2 32.0 0.5 26.0 0.2 32.0 0.5 2 7 2.7 14.0 0.5 30 10 0.7 4- 2.8 housing (insulator) r13 k a g top view side view bottom view hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 u.s.a.: hamamatsu corporation: 360 foothill road, p. o. box 6910, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fa x: (1)908-231-1218 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, f ax: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road welwyn garden city hertfordshire al7 1bw, united kingdom, teleph one: 44-(0)1707-294888, fax: 44(0)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171-41 solna, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e-mail: info@hamamatsu.se italy: hamamatsu photonics italia: s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39)02-935 81 733, fax: (39)02-935 81 741 e-mail: info@hamamatsu.it web site www.hamamatsu.com
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